Magnetoelectric Force Microscopy on Antiferromagnetic 180∘ Domains in Cr2O3

Magnetoelectric Force Microscopy on Antiferromagnetic 180∘ Domains in Cr2O3

Magnetoelectric force microscopy (MeFM) is characterized as methodical tool for the investigation of antiferromagnetic domain states, in particular of the 180 ∘ variety. As reference compound for this investigation we use Cr 2 O 3 . Access to the antiferromagnetic order is provided by the linear magnetoelectric effect. We resolve the opposite antiferromagnetic 180 ∘ domain states of Cr 2 O 3 an...

Magnetoelectric Cr2O3 and relativity theory

Relativity theory is useful for understanding the phenomenology of the magnetoelectric effect of the antiferromagnet chromium sesquioxide Cr2O3 in two respects: (i) One gets a clear idea about the physical dimensions of the electromagnetic quantities involved, in particular about the dimensions of the magnetoelectric moduli that we suggest to tabulate in future as dimensionless relative quantit...

Dispersion of Electric-Field-Induced Faraday Effect in Magnetoelectric Cr2O3

Purely antiferromagnetic magnetoelectric random access memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances a...

Full magnetoelectric response of Cr2O3 from first principles

Andrei Malashevich,1,2,* Sinisa Coh,1,2 Ivo Souza,3,4 and David Vanderbilt5 1Department of Physics, University of California, Berkeley, California 94720, USA 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 3Centro de Fı́sica de Materiales (CSIC) and DIPC, Universidad del Paı́s Vasco, 20018 San Sebastián, Spain 4Ikerbasque Foundation, 48011 Bilb...